Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot copyright stress
Abstract The need for understanding the low-frequency noise (LFN) of metal oxide semiconductor thin-film transistors (TFTs) is increasing owing to the substantial effects of LFN in various circuit applications.A focal point of inquiry pertains to the examination of LFN amidst bias stress conditions, known to compromise TFT reliability.In this study